a p40p03gh/j-hf advanced power p-channel enhancement mode electronics corp. power mosfet lower on-resistance bv dss -30v simple drive requirement r ds(on) 28m fast switching characteristic i d -30a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice 200812305 1 rating -30 + 20 -30 0.25 -55 to 150 halogen-free product continuous drain current, v gs @ 10v -18 pulsed drain current 1 -120 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v 31.3 -55 to 150 maximum thermal resistance, junction-ambient (pcb mount) 3 thermal data parameter total power dissipation operating junction temperature range storage temperature range linear derating factor g d s g d s to-252(h) g d s to-251(j) the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap40p03gj) is available for low-profile applications.
ap40p03gh/j-hf electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v b ? ? , source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-18a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-18a, v gs =0v, - 30 - ns q rr reverse recovery charge di/dt=-100a/s - 21 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 3.surface mounted on 1 in 2 copper pad of fr4 board
ap40p03gh/j-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 20 30 40 50 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -10 a t c =25 0 20 40 60 80 100 120 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -5.0v -4.5v v g = -3.0 v 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-1 8 a v g =-10v 0 3 6 9 12 15 18 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 20 40 60 80 100 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c -10v -7.0v -5.0v -4.5v v g = -3.0 v
ap40p03gh/j-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0 5 10 15 20 25 30 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds =- 24 v i d =-1 8 a 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1.0 10.0 100.0 1000.0 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 f 2.20 2.63 3.05 f1 0.50 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 laser marking symbols advanced power electronics corp. e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 40p03gh ywwsss date code (ywwsss) y last digit of the year ww week sss sequence if last "s" is numerical letter : rohs product if last "s" is english letter : hf & rohs product logo meet rohs requirement for low voltage mosfet only e3 5
package outline : to-251 min nom max a 2.20 2.30 2.40 a1 0.90 1.20 1.50 b1 0.40 0.60 0.80 b2 0.60 0.85 1.05 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 d 6.40 6.60 6.80 d1 4.80 5.20 5.50 e 6.70 7.00 7.30 e1 5.40 5.60 5.80 e2 1.30 1.50 1.70 e ---- 2.30 ---- f 7.00 8.30 9.60 meet rohs requirement for low voltage mosfet only
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